Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets

Maryam Sajedin, Issa Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez-Barciela, Manuel Violas

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Abstract

This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 μm AlGaAs/InGaAs Depletion-Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2 mm2.
Original languageEnglish
Article numbere2131
JournalElectronics
Volume10
Issue number17
Early online date2 Sep 2021
DOIs
Publication statusE-pub ahead of print - 2 Sep 2021

Keywords

  • MMIC
  • 5G
  • Doherty Power Amplifier
  • GaAs pHEMT
  • mobile handset

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