Simple method for measuring the linewidth enhancement factor of semiconductor lasers

Yuanlong Fan; Yanguang Yu; Jiangtao Xi; Ginu Rajan; Qinghua Guo; Jun Tong

doi:10.1364/AO.54.010295

Simple method for measuring the linewidth enhancement factor of semiconductor lasers

Yuanlong Fan, Yanguang Yu, Jiangtao Xi, Ginu Rajan, Qinghua Guo, Jun Tong

Research output: Contribution to journal › Article › peer-review

Abstract

A simple method for measuring the linewidth enhancement factor (LEF) of semiconductor lasers (SLs) is proposed and demonstrated in this paper. This method is based on the self-mixing effect when a small portion of optical signal intensity emitted by the SL reflected by the moving target re-enters the SL cavity, leading to a modulation in the SL’s output power intensity, in which the modulated envelope shape depends on the optical feedback strength as well as the LEF. By investigating the relationship between the light phase and power from the well-known Lang and Kobayashi equations, it was found that the LEF can be simply measured from the power value overlapped by two SLs’ output power under two different optical feedback strengths. Our proposed method is verified by both simulations and experiments.

Original language	English
Pages (from-to)	10295-10298
Journal	Applied Optics
Volume	54
Issue number	34
DOIs	https://doi.org/10.1364/AO.54.010295
Publication status	Published - 1 Dec 2015

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title = "Simple method for measuring the linewidth enhancement factor of semiconductor lasers",

abstract = "A simple method for measuring the linewidth enhancement factor (LEF) of semiconductor lasers (SLs) is proposed and demonstrated in this paper. This method is based on the self-mixing effect when a small portion of optical signal intensity emitted by the SL reflected by the moving target re-enters the SL cavity, leading to a modulation in the SL{\textquoteright}s output power intensity, in which the modulated envelope shape depends on the optical feedback strength as well as the LEF. By investigating the relationship between the light phase and power from the well-known Lang and Kobayashi equations, it was found that the LEF can be simply measured from the power value overlapped by two SLs{\textquoteright} output power under two different optical feedback strengths. Our proposed method is verified by both simulations and experiments.",

author = "Yuanlong Fan and Yanguang Yu and Jiangtao Xi and Ginu Rajan and Qinghua Guo and Jun Tong",

year = "2015",

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doi = "10.1364/AO.54.010295",

language = "English",

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T1 - Simple method for measuring the linewidth enhancement factor of semiconductor lasers

AU - Fan, Yuanlong

AU - Yu, Yanguang

AU - Xi, Jiangtao

AU - Rajan, Ginu

AU - Guo, Qinghua

AU - Tong, Jun

PY - 2015/12/1

Y1 - 2015/12/1

N2 - A simple method for measuring the linewidth enhancement factor (LEF) of semiconductor lasers (SLs) is proposed and demonstrated in this paper. This method is based on the self-mixing effect when a small portion of optical signal intensity emitted by the SL reflected by the moving target re-enters the SL cavity, leading to a modulation in the SL’s output power intensity, in which the modulated envelope shape depends on the optical feedback strength as well as the LEF. By investigating the relationship between the light phase and power from the well-known Lang and Kobayashi equations, it was found that the LEF can be simply measured from the power value overlapped by two SLs’ output power under two different optical feedback strengths. Our proposed method is verified by both simulations and experiments.

AB - A simple method for measuring the linewidth enhancement factor (LEF) of semiconductor lasers (SLs) is proposed and demonstrated in this paper. This method is based on the self-mixing effect when a small portion of optical signal intensity emitted by the SL reflected by the moving target re-enters the SL cavity, leading to a modulation in the SL’s output power intensity, in which the modulated envelope shape depends on the optical feedback strength as well as the LEF. By investigating the relationship between the light phase and power from the well-known Lang and Kobayashi equations, it was found that the LEF can be simply measured from the power value overlapped by two SLs’ output power under two different optical feedback strengths. Our proposed method is verified by both simulations and experiments.

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DO - 10.1364/AO.54.010295

M3 - Article

VL - 54

SP - 10295

EP - 10298

JO - Applied Optics

JF - Applied Optics

SN - 1559-128X

IS - 34

ER -

Simple method for measuring the linewidth enhancement factor of semiconductor lasers

Abstract

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