Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms

Jin Wen, Kang Li, Yongkang Gong, Bethan Copner, Ben Hughes, Michael A. Campbell, Mattia Lazzaini, Lina Duan, Chengju Ma, Wei Fan, Zhenan Jia, Haiwei Fu, Nigel Copner

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Abstract

We design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1-xGaxAsyP1-y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.
Original languageEnglish
Article number125921
JournalOptics Communications
Volume473
Issue number00
Early online date15 Apr 2020
DOIs
Publication statusPublished - 15 Oct 2020

Keywords

  • InP/In1-xGaxAsyP1-y waveguide
  • wavelength conversion
  • four-wave mixing
  • nonlinear optics

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