Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms

Jin Wen; Kang Li; Yongkang Gong; Bethan Copner; Ben Hughes; Michael A. Campbell; Mattia Lazzaini; Lina Duan; Chengju Ma; Wei Fan; Zhenan Jia; Haiwei Fu; Nigel Copner

doi:10.1016/j.optcom.2020.125921

Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms

Jin Wen, Kang Li, Yongkang Gong, Bethan Copner, Ben Hughes, Michael A. Campbell, Mattia Lazzaini, Lina Duan, Chengju Ma, Wei Fan, Zhenan Jia, Haiwei Fu, Nigel Copner

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Abstract

We design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1-xGaxAsyP1-y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.

Original language	English
Article number	125921
Journal	Optics Communications
Volume	473
Issue number	00
Early online date	15 Apr 2020
DOIs	https://doi.org/10.1016/j.optcom.2020.125921
Publication status	Published - 15 Oct 2020

Keywords

InP/In1-xGaxAsyP1-y waveguide
wavelength conversion
four-wave mixing
nonlinear optics

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10.1016/j.optcom.2020.125921

AP-2075R1 (2)Accepted author manuscript, 874 KBLicence: CC BY-NC-ND

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@article{d00da3a41df94d1b82fd623d96ccba5c,

title = "Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms",

abstract = "We design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1-xGaxAsyP1-y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.",

keywords = "InP/In1-xGaxAsyP1-y waveguide, wavelength conversion, four-wave mixing, nonlinear optics",

author = "Jin Wen and Kang Li and Yongkang Gong and Bethan Copner and Ben Hughes and Campbell, {Michael A.} and Mattia Lazzaini and Lina Duan and Chengju Ma and Wei Fan and Zhenan Jia and Haiwei Fu and Nigel Copner",

note = "Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No. 61505160 , the Innovation Capability Support Program of Shaanxi China (Program No. 2018KJXX-042 ), the Natural Science Basic Research Program of Shaanxi China (Program No. 2019JM-084 ), the 2015 Foshan Technology Innovation Group Project (Advanced Solid State Light Source Application and Innovation Team) and the National Physical Laboratory Directors{\textquoteright} Science and Engineering Fund Investigators Award UK (project number 06. 2019). Publisher Copyright: {\textcopyright} 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2020",

month = oct,

day = "15",

doi = "10.1016/j.optcom.2020.125921",

language = "English",

volume = "473",

journal = "Optics Communications",

issn = "0030-4018",

publisher = "Elsevier",

number = "00",

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TY - JOUR

T1 - Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms

AU - Wen, Jin

AU - Li, Kang

AU - Gong, Yongkang

AU - Copner, Bethan

AU - Hughes, Ben

AU - Campbell, Michael A.

AU - Lazzaini, Mattia

AU - Duan, Lina

AU - Ma, Chengju

AU - Fan, Wei

AU - Jia, Zhenan

AU - Fu, Haiwei

AU - Copner, Nigel

N1 - Funding Information: This work was supported by the National Natural Science Foundation of China under Grant No. 61505160 , the Innovation Capability Support Program of Shaanxi China (Program No. 2018KJXX-042 ), the Natural Science Basic Research Program of Shaanxi China (Program No. 2019JM-084 ), the 2015 Foshan Technology Innovation Group Project (Advanced Solid State Light Source Application and Innovation Team) and the National Physical Laboratory Directors’ Science and Engineering Fund Investigators Award UK (project number 06. 2019). Publisher Copyright: © 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/10/15

Y1 - 2020/10/15

N2 - We design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1-xGaxAsyP1-y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.

AB - We design the high confinement InP/In1-xGaxAsyP1-y semiconductor waveguides and investigate the effective wavelength conversion based on this platform. Efficient confinement and mode field area fluctuation at different wavelength is analyzed to achieve the high nonlinear coefficient. The numerical results show that nearly zero phase-mismatch condition can be satisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, and the wavelength conversion ranging over 40 nm with the maximum conversion efficiency -26.3 dB is achieved. Meanwhile, the influences of the doping parameter y and pumping wavelength on the bandwidth and conversion efficiency are also discussed and optimized. Our demonstration of the excellent all-optical wavelength conversion properties of the InP/In1-xGaxAsyP1-y waveguides could pave the way towards direct integration telecom band devices on stand semiconductor platforms.

KW - InP/In1-xGaxAsyP1-y waveguide

KW - wavelength conversion

KW - four-wave mixing

KW - nonlinear optics

U2 - 10.1016/j.optcom.2020.125921

DO - 10.1016/j.optcom.2020.125921

M3 - Article

SN - 0030-4018

VL - 473

JO - Optics Communications

JF - Optics Communications

IS - 00

M1 - 125921

ER -

Numerical investigation of on-chip wavelength conversion based on InP/In1-xGaxAsyP1-y semiconductor waveguide platforms

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