Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks

Maryam Sajedin; Issa Elfergani; Jonathan Rodriguez; Manuel Violas; Abdalfettah Asharaa; Raed Abd-Alhameed; Monica Fernandez-Barciela; Ahmed M. Abdulkhaleq

doi:10.13164/re.2021.0372

Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks

Maryam Sajedin^*, Issa Elfergani, Jonathan Rodriguez, Manuel Violas, Abdalfettah Asharaa, Raed Abd-Alhameed, Monica Fernandez-Barciela, Ahmed M. Abdulkhaleq

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6 GHz frequency.

Original language	English
Pages (from-to)	372-380
Number of pages	9
Journal	Radioengineering
Volume	30
Issue number	2
DOIs	https://doi.org/10.13164/re.2021.0372
Publication status	Published - 1 Jun 2021
Externally published	Yes

Keywords

class-F
GaN HEMT
heat transfer
Power amplifiers
power dissipation

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10.13164/re.2021.0372Licence: CC BY

Version of Record with a CC BY LicenceFinal published version, 1.02 MBLicence: CC BY

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@article{aa577d6eeac14fe2864016ae8b5d4b46,

title = "Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks",

abstract = "This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6 GHz frequency.",

keywords = "class-F, GaN HEMT, heat transfer, Power amplifiers, power dissipation",

author = "Maryam Sajedin and Issa Elfergani and Jonathan Rodriguez and Manuel Violas and Abdalfettah Asharaa and Raed Abd-Alhameed and Monica Fernandez-Barciela and Abdulkhaleq, {Ahmed M.}",

note = "Funding Information: This work is supported by the POSITION-II project funded by the ECSEL joint Undertaking under grant number Ecsel-7831132-Postitio-II-2017-IA, www. position-2.eu, and the Spanish National Board of Scientific and Technology Research and the European Union (ERDF), through Project TEC2017-88242-C3-2-R. Publisher Copyright: {\textcopyright} 2021",

year = "2021",

month = jun,

day = "1",

doi = "10.13164/re.2021.0372",

language = "English",

volume = "30",

pages = "372--380",

journal = "Radioengineering",

issn = "1210-2512",

publisher = "Radioengineering Society",

number = "2",

}

TY - JOUR

T1 - Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks

AU - Sajedin, Maryam

AU - Elfergani, Issa

AU - Rodriguez, Jonathan

AU - Violas, Manuel

AU - Asharaa, Abdalfettah

AU - Abd-Alhameed, Raed

AU - Fernandez-Barciela, Monica

AU - Abdulkhaleq, Ahmed M.

N1 - Funding Information: This work is supported by the POSITION-II project funded by the ECSEL joint Undertaking under grant number Ecsel-7831132-Postitio-II-2017-IA, www. position-2.eu, and the Spanish National Board of Scientific and Technology Research and the European Union (ERDF), through Project TEC2017-88242-C3-2-R. Publisher Copyright: © 2021

PY - 2021/6/1

Y1 - 2021/6/1

N2 - This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6 GHz frequency.

AB - This work integrates a harmonic tuning mechanism in synergy with the GaN HEMT transistor for 5G mobile transceiver applications. Following a theoretical study on the operational behavior of the Class-F power amplifier (PA), a complete amplifier design procedure is described that includes the proposed Harmonic Control Circuits for the second and third harmonics and optimum loading conditions for phase shifting of the drain current and voltage waveforms. The performance improvement provided by the Class-F configuration is validated by comparing the experimental and simulated results. The designed 10W Class-F PA prototype provides a measured peak drain efficiency of 64.7% at 1dB compression point of the PA at 3.6 GHz frequency.

KW - class-F

KW - GaN HEMT

KW - heat transfer

KW - Power amplifiers

KW - power dissipation

U2 - 10.13164/re.2021.0372

DO - 10.13164/re.2021.0372

M3 - Article

AN - SCOPUS:85108841387

SN - 1210-2512

VL - 30

SP - 372

EP - 380

JO - Radioengineering

JF - Radioengineering

IS - 2

ER -

Multi-Resonant Class-F Power Amplifier Design for 5G Cellular Networks

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Keywords

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