Modelling the temperature dependence of 28nm fully depleted silicon-on insulator (FDSOI) static characteristics based on parallel computing approach

Abdelgader M. Abdalla, I. T.E. Elfergani, Jonathan Rodriguez

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

This paper provides a behavioral model of 28nm FDSOI technology for a wide temperature range. In this work, a multivariate interpolation lookup tables (LUTs) model considering temperature dependence for nanometer CMOS transistors is presented. The new approach is validated by comparison with the bias current and capacitances tables in a given wide range of the temperature for the simulation of MOS transistor circuits. This novel approach significantly enhances the simulation speed with sufficient accuracy via a dynamic programming procedure over the current state of the art models. Simulation results are implemented in a 28-nm fully depleted SOI (FDSOI) technology. The proposed model achieving speedups of up to eight orders of magnitude at transistor level considering temperature effect found in FDSOI compared to simulations with both the BSIM SOI model and the Lagrange interpolation lookup table model.

Original languageEnglish
Title of host publicationNanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509043521
DOIs
Publication statusPublished - 7 Dec 2016
Externally publishedYes
Event11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016 - Toulouse, France
Duration: 9 Oct 201612 Oct 2016

Publication series

NameNanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings

Conference

Conference11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016
Country/TerritoryFrance
CityToulouse
Period9/10/1612/10/16

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