Low Threshold Gain Visible Semiconductor Nanolasers

Yuanlong Fan; K. Alan Shore; Yanhua Hong

Low Threshold Gain Visible Semiconductor Nanolasers

Yuanlong Fan, K. Alan Shore, Yanhua Hong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, numerical simulations are performed to design low threshold gain visible semiconductor nanolasers. By increasing the thickness of the active region to maximize the lasing mode confinement, a low threshold gain of only 279 cm -1 is obtained.

Original language	English
Title of host publication	2019 IEEE Photonics Conference (IPC) Proceedings
Subtitle of host publication	San Antonio, TX USA 29 September – 3 October 2019
Publisher	Institute of Electrical and Electronics Engineers
ISBN (Electronic)	978-1-7281-0616-8
ISBN (Print)	978-1-7281-0615-1
Publication status	Published - Oct 2019
Event	2019 IEEE Photonics Conference (IPC) - Hilton, San Antonio, United States Duration: 29 Sept 2019 → 3 Oct 2019

Publication series

Name
ISSN (Print)	2374-0140
ISSN (Electronic)	2575-274X

Conference

Conference	2019 IEEE Photonics Conference (IPC)
Country/Territory	United States
City	San Antonio
Period	29/09/19 → 3/10/19

Access to Document

https://doi.org/10.1109/IPCon.2019.8908279Licence: CC BY-NC-ND

Cite this

@inproceedings{97ea92eb7c2d40b0a4193f48877deade,

title = "Low Threshold Gain Visible Semiconductor Nanolasers",

abstract = "In this paper, numerical simulations are performed to design low threshold gain visible semiconductor nanolasers. By increasing the thickness of the active region to maximize the lasing mode confinement, a low threshold gain of only 279 cm -1 is obtained.",

author = "Yuanlong Fan and Shore, {K. Alan} and Yanhua Hong",

year = "2019",

month = oct,

language = "English",

isbn = "978-1-7281-0615-1",

publisher = "Institute of Electrical and Electronics Engineers",

booktitle = "2019 IEEE Photonics Conference (IPC) Proceedings",

note = "2019 IEEE Photonics Conference (IPC) ; Conference date: 29-09-2019 Through 03-10-2019",

}

Fan, Y, Shore, KA & Hong, Y 2019, Low Threshold Gain Visible Semiconductor Nanolasers. in 2019 IEEE Photonics Conference (IPC) Proceedings : San Antonio, TX USA 29 September – 3 October 2019. Institute of Electrical and Electronics Engineers, 2019 IEEE Photonics Conference (IPC), San Antonio, Texas, United States, 29/09/19. <https://doi.org/10.1109/IPCon.2019.8908279>

TY - GEN

T1 - Low Threshold Gain Visible Semiconductor Nanolasers

AU - Fan, Yuanlong

AU - Shore, K. Alan

AU - Hong, Yanhua

PY - 2019/10

Y1 - 2019/10

N2 - In this paper, numerical simulations are performed to design low threshold gain visible semiconductor nanolasers. By increasing the thickness of the active region to maximize the lasing mode confinement, a low threshold gain of only 279 cm -1 is obtained.

AB - In this paper, numerical simulations are performed to design low threshold gain visible semiconductor nanolasers. By increasing the thickness of the active region to maximize the lasing mode confinement, a low threshold gain of only 279 cm -1 is obtained.

M3 - Conference contribution

SN - 978-1-7281-0615-1

BT - 2019 IEEE Photonics Conference (IPC) Proceedings

PB - Institute of Electrical and Electronics Engineers

T2 - 2019 IEEE Photonics Conference (IPC)

Y2 - 29 September 2019 through 3 October 2019

ER -

Low Threshold Gain Visible Semiconductor Nanolasers

Abstract

Publication series

Conference

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Cite this