TY - JOUR
T1 - Load-modulation technique without using quarter-wavelength transmission line
AU - Abdulkhaleq, Ahmed M.
AU - Yahya, Maan A.
AU - Parchin, Naser O.
AU - Al-Yasir, Yasir
AU - Sajedin, Maryam
AU - Elfergani, Issa
AU - McEwan, Neil J.
AU - Abd-Alhameed, Raed A.
AU - Rayit, Ashwain
AU - Rodriguez, Jonathan
N1 - Publisher Copyright:
© The Institution of Engineering and Technology 2020.
PY - 2020/9/9
Y1 - 2020/9/9
N2 - A proposed method for achieving active load-modulation technique without using a quarter-wavelength transmission line is discussed and evaluated. The theoretical analysis shows that the active load-modulation can be achieved without using a quarter-wavelength line, where the main amplifier sees a low impedance when the input signal level is low, and this impedance increases in proportion to the amount of current contributed from the peaking amplifier. The peaking amplifier sees an impedance decreasing from infinity to the normalized impedance. To validate the method, a circuit was designed, simulated and fabricated using two symmetrical gallium nitride (GaN) transistors (6 W) to achieve a peak power of 12 W and 6 dB output backoff efficiency. The design operates with 400 MHz bandwidth at 3.6 GHz and showed an average efficiency of 50% at 6 dB backoff and an efficiency of 75% at peak power. The designed circuit was tested with CW and modulated signals, the amplifier showed an Adjacent Channel Power Ratio (ACPR) of 31-35.5 dB when tested with a wideband code division multiple access signal of 6 dB peak-average-power ratio (PAPR) at 35.5 dBm average power. Additional 20 dB of linearity improvement was achieved after adding a lineariser.
AB - A proposed method for achieving active load-modulation technique without using a quarter-wavelength transmission line is discussed and evaluated. The theoretical analysis shows that the active load-modulation can be achieved without using a quarter-wavelength line, where the main amplifier sees a low impedance when the input signal level is low, and this impedance increases in proportion to the amount of current contributed from the peaking amplifier. The peaking amplifier sees an impedance decreasing from infinity to the normalized impedance. To validate the method, a circuit was designed, simulated and fabricated using two symmetrical gallium nitride (GaN) transistors (6 W) to achieve a peak power of 12 W and 6 dB output backoff efficiency. The design operates with 400 MHz bandwidth at 3.6 GHz and showed an average efficiency of 50% at 6 dB backoff and an efficiency of 75% at peak power. The designed circuit was tested with CW and modulated signals, the amplifier showed an Adjacent Channel Power Ratio (ACPR) of 31-35.5 dB when tested with a wideband code division multiple access signal of 6 dB peak-average-power ratio (PAPR) at 35.5 dBm average power. Additional 20 dB of linearity improvement was achieved after adding a lineariser.
U2 - 10.1049/iet-map.2019.0957
DO - 10.1049/iet-map.2019.0957
M3 - Article
AN - SCOPUS:85091947542
SN - 1751-8725
VL - 14
SP - 1209
EP - 1215
JO - IET Microwaves, Antennas and Propagation
JF - IET Microwaves, Antennas and Propagation
IS - 11
M1 - 0957
ER -