Abstract
This paper presents a comprehensive theoretical study of the optical and thermal properties of an electrically pumped semiconductor nanolaser (SNL) having an
GaN/(InGaN/GaN MQWs)/GaN core shell structure. Numerical results show that the lasing whispering-gallery mode has a threshold gain of 413 cm−1. Furthermore, it is shown that when it is operated well-above threshold, the device temperature increases by only 22 K above an ambient temperature of 300 K. These promising results are attributed to the strong mode confinement in the active region and the good thermal properties of the material system of the proposed structure. The results presented in this paper offer guidelines for fabrication of electrically pumped room temperature continuous wave SNL operating in the visible spectral region.
GaN/(InGaN/GaN MQWs)/GaN core shell structure. Numerical results show that the lasing whispering-gallery mode has a threshold gain of 413 cm−1. Furthermore, it is shown that when it is operated well-above threshold, the device temperature increases by only 22 K above an ambient temperature of 300 K. These promising results are attributed to the strong mode confinement in the active region and the good thermal properties of the material system of the proposed structure. The results presented in this paper offer guidelines for fabrication of electrically pumped room temperature continuous wave SNL operating in the visible spectral region.
| Original language | English |
|---|---|
| Article number | 2000907 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 54 |
| Issue number | 5 |
| Early online date | 10 Sept 2018 |
| DOIs | |
| Publication status | Published - Oct 2018 |