Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

A. Grier*, A. Valavanis, C. Edmunds, J. Shao, G. Gardner, M. J. Manfra, O. Malis, D. Indjin, Z. Ikonic, P. Harrison, Jonathan D. Cooper

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

Original languageEnglish
Title of host publication2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)
PublisherInstitute of Electrical and Electronics Engineers
Pages90-91
Number of pages2
DOIs
Publication statusPublished - 25 Aug 2016
Externally publishedYes
EventIEEE Photonics Society Summer Topical Meeting Series (SUM) - Newport Beach, Canada
Duration: 11 Jul 201613 Jul 2016

Conference

ConferenceIEEE Photonics Society Summer Topical Meeting Series (SUM)
Country/TerritoryCanada
CityNewport Beach
Period11/07/1613/07/16

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