Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

A. Grier; A. Valavanis; C. Edmunds; J. Shao; G. Gardner; M. J. Manfra; O. Malis; D. Indjin; Z. Ikonic; P. Harrison; Jonathan D. Cooper

doi:10.1109/PHOSST.2016.7548743

Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

A. Grier^*, A. Valavanis, C. Edmunds, J. Shao, G. Gardner, M. J. Manfra, O. Malis, D. Indjin, Z. Ikonic, P. Harrison, Jonathan D. Cooper

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

Original language	English
Title of host publication	2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)
Publisher	Institute of Electrical and Electronics Engineers
Pages	90-91
Number of pages	2
DOIs	https://doi.org/10.1109/PHOSST.2016.7548743
Publication status	Published - 25 Aug 2016
Externally published	Yes
Event	IEEE Photonics Society Summer Topical Meeting Series (SUM) - Newport Beach, Canada Duration: 11 Jul 2016 → 13 Jul 2016

Conference

Conference	IEEE Photonics Society Summer Topical Meeting Series (SUM)
Country/Territory	Canada
City	Newport Beach
Period	11/07/16 → 13/07/16

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10.1109/PHOSST.2016.7548743Licence: CC BY-NC-ND

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Grier, A., Valavanis, A., Edmunds, C., Shao, J., Gardner, G., Manfra, M. J., Malis, O., Indjin, D., Ikonic, Z., Harrison, P., & Cooper, J. D. (2016). Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects. In 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) (pp. 90-91). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PHOSST.2016.7548743

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title = "Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects",

abstract = "We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.",

author = "A. Grier and A. Valavanis and C. Edmunds and J. Shao and G. Gardner and Manfra, {M. J.} and O. Malis and D. Indjin and Z. Ikonic and P. Harrison and Cooper, {Jonathan D.}",

note = "http://eprints.whiterose.ac.uk/106549/1/SummerTopicals2016-abstract-Ikonic-contributed.pdf; IEEE Photonics Society Summer Topical Meeting Series (SUM) ; Conference date: 11-07-2016 Through 13-07-2016",

year = "2016",

month = aug,

day = "25",

doi = "10.1109/PHOSST.2016.7548743",

language = "English",

pages = "90--91",

booktitle = "2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)",

publisher = "Institute of Electrical and Electronics Engineers",

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Grier, A, Valavanis, A, Edmunds, C, Shao, J, Gardner, G, Manfra, MJ, Malis, O, Indjin, D, Ikonic, Z, Harrison, P & Cooper, JD 2016, Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects. in 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). Institute of Electrical and Electronics Engineers, pp. 90-91, IEEE Photonics Society Summer Topical Meeting Series (SUM), Newport Beach, Canada, 11/07/16. https://doi.org/10.1109/PHOSST.2016.7548743

Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects. / Grier, A.; Valavanis, A.; Edmunds, C. et al.

2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). Institute of Electrical and Electronics Engineers, 2016. p. 90-91.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

AU - Grier, A.

AU - Valavanis, A.

AU - Edmunds, C.

AU - Shao, J.

AU - Gardner, G.

AU - Manfra, M. J.

AU - Malis, O.

AU - Indjin, D.

AU - Ikonic, Z.

AU - Harrison, P.

AU - Cooper, Jonathan D.

N1 - http://eprints.whiterose.ac.uk/106549/1/SummerTopicals2016-abstract-Ikonic-contributed.pdf

PY - 2016/8/25

Y1 - 2016/8/25

N2 - We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

AB - We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

U2 - 10.1109/PHOSST.2016.7548743

DO - 10.1109/PHOSST.2016.7548743

M3 - Conference contribution

SP - 90

EP - 91

BT - 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

PB - Institute of Electrical and Electronics Engineers

T2 - IEEE Photonics Society Summer Topical Meeting Series (SUM)

Y2 - 11 July 2016 through 13 July 2016

ER -

Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

Abstract

Conference

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