Abstract
We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.
Original language | English |
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Title of host publication | 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) |
Publisher | Institute of Electrical and Electronics Engineers |
Pages | 90-91 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 25 Aug 2016 |
Externally published | Yes |
Event | IEEE Photonics Society Summer Topical Meeting Series (SUM) - Newport Beach, Canada Duration: 11 Jul 2016 → 13 Jul 2016 |
Conference
Conference | IEEE Photonics Society Summer Topical Meeting Series (SUM) |
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Country/Territory | Canada |
City | Newport Beach |
Period | 11/07/16 → 13/07/16 |