A survey on RF and microwave doherty power amplifier for mobile handset applications

Maryam Sajedin; I. T.E. Elfergani; Jonathan Rodriguez; Raed Abd-Alhameed; Monica Fernandez Barciela

doi:10.3390/electronics8060717

A survey on RF and microwave doherty power amplifier for mobile handset applications

Maryam Sajedin^*, I. T.E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez Barciela

^*Corresponding author for this work

Research output: Contribution to journal › Review article › peer-review

6 Citations (Scopus)

41 Downloads (Pure)

Abstract

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

Original language	English
Article number	717
Journal	Electronics (Switzerland)
Volume	8
Issue number	6
DOIs	https://doi.org/10.3390/electronics8060717
Publication status	Published - 25 Jun 2019
Externally published	Yes

Keywords

4G
5G
Doherty power amplifier
GaN-HEMT
High efficiency
High power amplifiers

Access to Document

10.3390/electronics8060717Licence: CC BY

Version of Record with a CC BY LicenceFinal published version, 13.9 MBLicence: CC BY

Cite this

@article{7160e177194548ee99d92edfd49f1612,

title = "A survey on RF and microwave doherty power amplifier for mobile handset applications",

abstract = "This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier{\textquoteright}s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.",

keywords = "4G, 5G, Doherty power amplifier, GaN-HEMT, High efficiency, High power amplifiers",

author = "Maryam Sajedin and Elfergani, {I. T.E.} and Jonathan Rodriguez and Raed Abd-Alhameed and Barciela, {Monica Fernandez}",

note = "Funding Information: Funding: This project has received funding from the European Union{\textquoteright}s Horizon 2020 research and innovation program under grant agreement H2020-MSCA-ITN-2016 SECRET-722424. This work is also funded by the FCT/MEC through national funds and when applicable co-financed by the ERDF, under the PT2020 Partnership Agreement under the UID/EEA/50008/2019 project. Funding Information: Acknowledgments: This work is supported by the European Union{\textquoteright}s Horizon 2020 Research and Innovation program under grant agreement H2020-MSCA-ITN-2016-SECRET-722424. Publisher Copyright: {\textcopyright} 2019 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "2019",

month = jun,

day = "25",

doi = "10.3390/electronics8060717",

language = "English",

volume = "8",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "MDPI",

number = "6",

}

TY - JOUR

T1 - A survey on RF and microwave doherty power amplifier for mobile handset applications

AU - Sajedin, Maryam

AU - Elfergani, I. T.E.

AU - Rodriguez, Jonathan

AU - Abd-Alhameed, Raed

AU - Barciela, Monica Fernandez

N1 - Funding Information: Funding: This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement H2020-MSCA-ITN-2016 SECRET-722424. This work is also funded by the FCT/MEC through national funds and when applicable co-financed by the ERDF, under the PT2020 Partnership Agreement under the UID/EEA/50008/2019 project. Funding Information: Acknowledgments: This work is supported by the European Union’s Horizon 2020 Research and Innovation program under grant agreement H2020-MSCA-ITN-2016-SECRET-722424. Publisher Copyright: © 2019 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2019/6/25

Y1 - 2019/6/25

N2 - This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

AB - This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

KW - 4G

KW - 5G

KW - Doherty power amplifier

KW - GaN-HEMT

KW - High efficiency

KW - High power amplifiers

U2 - 10.3390/electronics8060717

DO - 10.3390/electronics8060717

M3 - Review article

AN - SCOPUS:85071149297

SN - 2079-9292

VL - 8

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 6

M1 - 717

ER -

A survey on RF and microwave doherty power amplifier for mobile handset applications

Abstract

Keywords

Access to Document

Fingerprint

Cite this