@article{7160e177194548ee99d92edfd49f1612,
title = "A survey on RF and microwave doherty power amplifier for mobile handset applications",
abstract = "This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier{\textquoteright}s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.",
keywords = "4G, 5G, Doherty power amplifier, GaN-HEMT, High efficiency, High power amplifiers",
author = "Maryam Sajedin and Elfergani, {I. T.E.} and Jonathan Rodriguez and Raed Abd-Alhameed and Barciela, {Monica Fernandez}",
note = "Funding Information: Funding: This project has received funding from the European Union{\textquoteright}s Horizon 2020 research and innovation program under grant agreement H2020-MSCA-ITN-2016 SECRET-722424. This work is also funded by the FCT/MEC through national funds and when applicable co-financed by the ERDF, under the PT2020 Partnership Agreement under the UID/EEA/50008/2019 project. Funding Information: Acknowledgments: This work is supported by the European Union{\textquoteright}s Horizon 2020 Research and Innovation program under grant agreement H2020-MSCA-ITN-2016-SECRET-722424. Publisher Copyright: {\textcopyright} 2019 by the authors. Licensee MDPI, Basel, Switzerland. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",
year = "2019",
month = jun,
day = "25",
doi = "10.3390/electronics8060717",
language = "English",
volume = "8",
journal = "Electronics (Switzerland)",
issn = "2079-9292",
publisher = "MDPI",
number = "6",
}