A survey on RF and microwave doherty power amplifier for mobile handset applications

Maryam Sajedin*, I. T.E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez Barciela

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

6 Citations (Scopus)
5 Downloads (Pure)

Abstract

This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications, will be discussed.

Original languageEnglish
Article number717
JournalElectronics (Switzerland)
Volume8
Issue number6
DOIs
Publication statusPublished - 25 Jun 2019
Externally publishedYes

Keywords

  • 4G
  • 5G
  • Doherty power amplifier
  • GaN-HEMT
  • High efficiency
  • High power amplifiers

Fingerprint

Dive into the research topics of 'A survey on RF and microwave doherty power amplifier for mobile handset applications'. Together they form a unique fingerprint.

Cite this