A Si-LDMOS doherty power amplifier for 2.620–2.690 GHz applications

B. A. Mohammed; N. A. Abduljabbar; A. S. Hussaini; R. Abd-Alhameed; S. M.R. Jones; R. W. Clarke; B. A.L. Gwandu; J. Rodriguez

doi:10.1166/asl.2017.8243

A Si-LDMOS doherty power amplifier for 2.620–2.690 GHz applications

B. A. Mohammed^*, N. A. Abduljabbar, A. S. Hussaini, R. Abd-Alhameed, S. M.R. Jones, R. W. Clarke, B. A.L. Gwandu, J. Rodriguez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, a Si-LDMOS Doherty power amplifier using 2.620 to 2.690 GHz band is presented. The fundamental objective of the proposed Doherty amplifier technique is to principally advance the efficiency of the transmitter while high linearity is maintained. This research focused on comparing performances between the double stage power amplifier and the conventional single stage class AB power amplifier. Consequently, individual simulation was conducted for both amplifiers. The results have shown that proposed double stage Doherty technique provides PAE of 52% and P_out of 41.5 dtechnique provides PAE of 52%Bm as against 28% PAE of single stage class AB PA. However, the performance of the double stage Doherty has demonstrated an impressive improvement by 24% power added efficiency.

Original language	English
Pages (from-to)	3874-3878
Number of pages	5
Journal	Advanced Science Letters
Volume	23
Issue number	5
DOIs	https://doi.org/10.1166/asl.2017.8243
Publication status	Published - 1 May 2017
Externally published	Yes

Keywords

Class AB amplifier
Class C amplifier
Doherty power amplifier (DPA)
Efficiency
Linearity

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Cite this

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title = "A Si-LDMOS doherty power amplifier for 2.620–2.690 GHz applications",

abstract = "In this paper, a Si-LDMOS Doherty power amplifier using 2.620 to 2.690 GHz band is presented. The fundamental objective of the proposed Doherty amplifier technique is to principally advance the efficiency of the transmitter while high linearity is maintained. This research focused on comparing performances between the double stage power amplifier and the conventional single stage class AB power amplifier. Consequently, individual simulation was conducted for both amplifiers. The results have shown that proposed double stage Doherty technique provides PAE of 52% and Pout of 41.5 dtechnique provides PAE of 52%Bm as against 28% PAE of single stage class AB PA. However, the performance of the double stage Doherty has demonstrated an impressive improvement by 24% power added efficiency.",

keywords = "Class AB amplifier, Class C amplifier, Doherty power amplifier (DPA), Efficiency, Linearity",

author = "Mohammed, {B. A.} and Abduljabbar, {N. A.} and Hussaini, {A. S.} and R. Abd-Alhameed and Jones, {S. M.R.} and Clarke, {R. W.} and Gwandu, {B. A.L.} and J. Rodriguez",

year = "2017",

month = may,

day = "1",

doi = "10.1166/asl.2017.8243",

language = "English",

volume = "23",

pages = "3874--3878",

journal = "Advanced Science Letters",

issn = "1936-6612",

publisher = "American Scientific Publishers",

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}

TY - JOUR

T1 - A Si-LDMOS doherty power amplifier for 2.620–2.690 GHz applications

AU - Mohammed, B. A.

AU - Abduljabbar, N. A.

AU - Hussaini, A. S.

AU - Abd-Alhameed, R.

AU - Jones, S. M.R.

AU - Clarke, R. W.

AU - Gwandu, B. A.L.

AU - Rodriguez, J.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - In this paper, a Si-LDMOS Doherty power amplifier using 2.620 to 2.690 GHz band is presented. The fundamental objective of the proposed Doherty amplifier technique is to principally advance the efficiency of the transmitter while high linearity is maintained. This research focused on comparing performances between the double stage power amplifier and the conventional single stage class AB power amplifier. Consequently, individual simulation was conducted for both amplifiers. The results have shown that proposed double stage Doherty technique provides PAE of 52% and Pout of 41.5 dtechnique provides PAE of 52%Bm as against 28% PAE of single stage class AB PA. However, the performance of the double stage Doherty has demonstrated an impressive improvement by 24% power added efficiency.

AB - In this paper, a Si-LDMOS Doherty power amplifier using 2.620 to 2.690 GHz band is presented. The fundamental objective of the proposed Doherty amplifier technique is to principally advance the efficiency of the transmitter while high linearity is maintained. This research focused on comparing performances between the double stage power amplifier and the conventional single stage class AB power amplifier. Consequently, individual simulation was conducted for both amplifiers. The results have shown that proposed double stage Doherty technique provides PAE of 52% and Pout of 41.5 dtechnique provides PAE of 52%Bm as against 28% PAE of single stage class AB PA. However, the performance of the double stage Doherty has demonstrated an impressive improvement by 24% power added efficiency.

KW - Class AB amplifier

KW - Class C amplifier

KW - Doherty power amplifier (DPA)

KW - Efficiency

KW - Linearity

U2 - 10.1166/asl.2017.8243

DO - 10.1166/asl.2017.8243

M3 - Article

AN - SCOPUS:85023754269

VL - 23

SP - 3874

EP - 3878

JO - Advanced Science Letters

JF - Advanced Science Letters

SN - 1936-6612

IS - 5

ER -

A Si-LDMOS doherty power amplifier for 2.620–2.690 GHz applications

Abstract

Keywords

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