A Compelet Design Procedure of an X-band MMIC Class-J Power Amplifier

Maryam Sajedin, Issa Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez-Barciela

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    This work presents a complete design process of a high-gain MMIC Class-J power amplifier (PA) based on the 0.25μm A1GaAs-InGaAs pHEMT technology at X-Band frequencies. The proposed technique can reduce the chip area and improve the energy efficiency. The simulation results indicate that the designed Class-J PA at 6V operation voltage achieves 18dB power gain, 56% PAE and output power of 27.6dBm at 1dB compression. The area size of two-stages PA is 0.9mm2.

    Original languageEnglish
    Title of host publication2021 IEEE 26th International Workshop on Computer Aided Modeling and Design of Communication Links and Networks, CAMAD 2021 - Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Electronic)978-1-6654-1779-2, 978-1-6654-1780-8
    DOIs
    Publication statusPublished - 6 Dec 2021
    Event26th IEEE International Workshop on Computer Aided Modeling and Design of Communication Links and Networks, CAMAD 2021 - Porto, Portugal
    Duration: 25 Oct 202127 Oct 2021

    Conference

    Conference26th IEEE International Workshop on Computer Aided Modeling and Design of Communication Links and Networks, CAMAD 2021
    Country/TerritoryPortugal
    CityPorto
    Period25/10/2127/10/21

    Keywords

    • MMIC
    • Power Amplifier
    • X-Band

    Fingerprint

    Dive into the research topics of 'A Compelet Design Procedure of an X-band MMIC Class-J Power Amplifier'. Together they form a unique fingerprint.

    Cite this