Abstract
This work presents a complete design process of a high-gain MMIC Class-J power amplifier (PA) based on the 0.25μm A1GaAs-InGaAs pHEMT technology at X-Band frequencies. The proposed technique can reduce the chip area and improve the energy efficiency. The simulation results indicate that the designed Class-J PA at 6V operation voltage achieves 18dB power gain, 56% PAE and output power of 27.6dBm at 1dB compression. The area size of two-stages PA is 0.9mm2.
Original language | English |
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Title of host publication | 2021 IEEE 26th International Workshop on Computer Aided Modeling and Design of Communication Links and Networks, CAMAD 2021 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 978-1-6654-1779-2, 978-1-6654-1780-8 |
DOIs | |
Publication status | Published - 6 Dec 2021 |
Event | 26th IEEE International Workshop on Computer Aided Modeling and Design of Communication Links and Networks, CAMAD 2021 - Porto, Portugal Duration: 25 Oct 2021 → 27 Oct 2021 |
Conference
Conference | 26th IEEE International Workshop on Computer Aided Modeling and Design of Communication Links and Networks, CAMAD 2021 |
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Country/Territory | Portugal |
City | Porto |
Period | 25/10/21 → 27/10/21 |
Keywords
- MMIC
- Power Amplifier
- X-Band