18-W three-way Doherty amplifier for 5G applications

A. M. Abdulkhaleq; M. A. Yahya; N. O. Parchin; Y. Al-Yasir; M. Sajedin; A. Rayit; I. T.E. Elfergani; R. A. Abd-Alhameed; J. Rodriguez

doi:10.1049/cp.2019.0719

18-W three-way Doherty amplifier for 5G applications

A. M. Abdulkhaleq^*, M. A. Yahya, N. O. Parchin, Y. Al-Yasir, M. Sajedin, A. Rayit, I. T.E. Elfergani, R. A. Abd-Alhameed, J. Rodriguez

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

Abstract

A new design configuration using three-way Doherty power amplifier targeting 3 4-3.8 GHz for 5G applications is designed using three 6W GaN HEMT transistors to achieve an 18W peak power. In this design, a new impedance modulation configuration is used, where the amplifiers are designed to achieve 13 dB of gam over the design band. Changing the location of the peaking amplifier or changing the operation sequence of the peaking amplifier can achieve good efficiency at the back-off region; however, the phase difference should be compensated at the input side of each amplifier. In addition, the performance variation of the designed amplifier was tested for different VSWRs taking into account the antenna impedance changing due to beamforming. There was an average of 2.2 dBm variation in the output power and 22% efficiency variation for different VSWRs at both the peaking and back-off regions.

Original language	English
DOIs	https://doi.org/10.1049/cp.2019.0719
Publication status	Published - 2019
Externally published	Yes
Event	Antennas and Propagation Conference 2019, APC 2019 - Birmingham, United Kingdom Duration: 11 Nov 2019 → 12 Nov 2019

Conference

Conference	Antennas and Propagation Conference 2019, APC 2019
Country/Territory	United Kingdom
City	Birmingham
Period	11/11/19 → 12/11/19

Keywords

Antenna
Beamforming
Efficiency
Three-way Doherty amplifier
VSWR

Access to Document

10.1049/cp.2019.0719

Cite this

@conference{b39b8d5edf5644379ad3d936d07bd2f2,

title = "18-W three-way Doherty amplifier for 5G applications",

abstract = "A new design configuration using three-way Doherty power amplifier targeting 3 4-3.8 GHz for 5G applications is designed using three 6W GaN HEMT transistors to achieve an 18W peak power. In this design, a new impedance modulation configuration is used, where the amplifiers are designed to achieve 13 dB of gam over the design band. Changing the location of the peaking amplifier or changing the operation sequence of the peaking amplifier can achieve good efficiency at the back-off region; however, the phase difference should be compensated at the input side of each amplifier. In addition, the performance variation of the designed amplifier was tested for different VSWRs taking into account the antenna impedance changing due to beamforming. There was an average of 2.2 dBm variation in the output power and 22% efficiency variation for different VSWRs at both the peaking and back-off regions.",

keywords = "Antenna, Beamforming, Efficiency, Three-way Doherty amplifier, VSWR",

author = "Abdulkhaleq, {A. M.} and Yahya, {M. A.} and Parchin, {N. O.} and Y. Al-Yasir and M. Sajedin and A. Rayit and Elfergani, {I. T.E.} and Abd-Alhameed, {R. A.} and J. Rodriguez",

note = "Publisher Copyright: {\textcopyright} 2019 Institution of Engineering and Technology. All rights reserved.; Antennas and Propagation Conference 2019, APC 2019 ; Conference date: 11-11-2019 Through 12-11-2019",

year = "2019",

doi = "10.1049/cp.2019.0719",

language = "English",

}

TY - CONF

T1 - 18-W three-way Doherty amplifier for 5G applications

AU - Abdulkhaleq, A. M.

AU - Yahya, M. A.

AU - Parchin, N. O.

AU - Al-Yasir, Y.

AU - Sajedin, M.

AU - Rayit, A.

AU - Elfergani, I. T.E.

AU - Abd-Alhameed, R. A.

AU - Rodriguez, J.

PY - 2019

Y1 - 2019

N2 - A new design configuration using three-way Doherty power amplifier targeting 3 4-3.8 GHz for 5G applications is designed using three 6W GaN HEMT transistors to achieve an 18W peak power. In this design, a new impedance modulation configuration is used, where the amplifiers are designed to achieve 13 dB of gam over the design band. Changing the location of the peaking amplifier or changing the operation sequence of the peaking amplifier can achieve good efficiency at the back-off region; however, the phase difference should be compensated at the input side of each amplifier. In addition, the performance variation of the designed amplifier was tested for different VSWRs taking into account the antenna impedance changing due to beamforming. There was an average of 2.2 dBm variation in the output power and 22% efficiency variation for different VSWRs at both the peaking and back-off regions.

AB - A new design configuration using three-way Doherty power amplifier targeting 3 4-3.8 GHz for 5G applications is designed using three 6W GaN HEMT transistors to achieve an 18W peak power. In this design, a new impedance modulation configuration is used, where the amplifiers are designed to achieve 13 dB of gam over the design band. Changing the location of the peaking amplifier or changing the operation sequence of the peaking amplifier can achieve good efficiency at the back-off region; however, the phase difference should be compensated at the input side of each amplifier. In addition, the performance variation of the designed amplifier was tested for different VSWRs taking into account the antenna impedance changing due to beamforming. There was an average of 2.2 dBm variation in the output power and 22% efficiency variation for different VSWRs at both the peaking and back-off regions.

KW - Antenna

KW - Beamforming

KW - Efficiency

KW - Three-way Doherty amplifier

KW - VSWR

U2 - 10.1049/cp.2019.0719

DO - 10.1049/cp.2019.0719

M3 - Paper

AN - SCOPUS:85086071316

T2 - Antennas and Propagation Conference 2019, APC 2019

Y2 - 11 November 2019 through 12 November 2019

ER -

18-W three-way Doherty amplifier for 5G applications

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this