@inproceedings{29f4d29eacef43d9ab85c4dae7e12e08,
title = "Modelling the temperature dependence of 28nm fully depleted silicon-on insulator (FDSOI) static characteristics based on parallel computing approach",
abstract = "This paper provides a behavioral model of 28nm FDSOI technology for a wide temperature range. In this work, a multivariate interpolation lookup tables (LUTs) model considering temperature dependence for nanometer CMOS transistors is presented. The new approach is validated by comparison with the bias current and capacitances tables in a given wide range of the temperature for the simulation of MOS transistor circuits. This novel approach significantly enhances the simulation speed with sufficient accuracy via a dynamic programming procedure over the current state of the art models. Simulation results are implemented in a 28-nm fully depleted SOI (FDSOI) technology. The proposed model achieving speedups of up to eight orders of magnitude at transistor level considering temperature effect found in FDSOI compared to simulations with both the BSIM SOI model and the Lagrange interpolation lookup table model.",
author = "Abdalla, {Abdelgader M.} and Elfergani, {I. T.E.} and Jonathan Rodriguez",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; 11th IEEE Nanotechnology Materials and Devices Conference, NMDC 2016 ; Conference date: 09-10-2016 Through 12-10-2016",
year = "2016",
month = dec,
day = "7",
doi = "10.1109/NMDC.2016.7777123",
language = "English",
series = "Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings",
address = "United States",
}