Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

A. Grier; A. Valavanis; C. Edmunds; J. Shao; G. Gardner; M. J. Manfra; O. Malis; D. Indjin; Z. Ikonic; P. Harrison; Jonathan D. Cooper

doi:10.1109/PHOSST.2016.7548743

Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

A. Grier^*, A. Valavanis, C. Edmunds, J. Shao, G. Gardner, M. J. Manfra, O. Malis, D. Indjin, Z. Ikonic, P. Harrison, Jonathan D. Cooper

^*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion Cynhadledd › Cyfraniad i gynhadledd › adolygiad gan gymheiriaid

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We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

Iaith wreiddiol	Saesneg
Teitl	2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)
Cyhoeddwr	Institute of Electrical and Electronics Engineers
Tudalennau	90-91
Nifer y tudalennau	2
Dynodwyr Gwrthrych Digidol (DOIs)	https://doi.org/10.1109/PHOSST.2016.7548743
Statws	Cyhoeddwyd - 25 Awst 2016
Cyhoeddwyd yn allanol	Ie
Digwyddiad	IEEE Photonics Society Summer Topical Meeting Series (SUM) - Newport Beach, Canada Hyd: 11 Gorff 2016 → 13 Gorff 2016

Cynhadledd

Cynhadledd	IEEE Photonics Society Summer Topical Meeting Series (SUM)
Gwlad/Tiriogaeth	Canada
Dinas	Newport Beach
Cyfnod	11/07/16 → 13/07/16

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10.1109/PHOSST.2016.7548743Trwydded: CC BY-NC-ND

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Grier, A., Valavanis, A., Edmunds, C., Shao, J., Gardner, G., Manfra, M. J., Malis, O., Indjin, D., Ikonic, Z., Harrison, P., & Cooper, J. D. (2016). Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects. Yn 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM) (tt. 90-91). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PHOSST.2016.7548743

@inproceedings{265c3a19880f41e488d7e96f351f43bd,

title = "Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects",

abstract = "We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.",

author = "A. Grier and A. Valavanis and C. Edmunds and J. Shao and G. Gardner and Manfra, {M. J.} and O. Malis and D. Indjin and Z. Ikonic and P. Harrison and Cooper, {Jonathan D.}",

note = "http://eprints.whiterose.ac.uk/106549/1/SummerTopicals2016-abstract-Ikonic-contributed.pdf; IEEE Photonics Society Summer Topical Meeting Series (SUM) ; Conference date: 11-07-2016 Through 13-07-2016",

year = "2016",

month = aug,

day = "25",

doi = "10.1109/PHOSST.2016.7548743",

language = "English",

pages = "90--91",

booktitle = "2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)",

publisher = "Institute of Electrical and Electronics Engineers",

}

Grier, A, Valavanis, A, Edmunds, C, Shao, J, Gardner, G, Manfra, MJ, Malis, O, Indjin, D, Ikonic, Z, Harrison, P & Cooper, JD 2016, Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects. yn 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). Institute of Electrical and Electronics Engineers, tt. 90-91, IEEE Photonics Society Summer Topical Meeting Series (SUM), Newport Beach, Canada, 11/07/16. https://doi.org/10.1109/PHOSST.2016.7548743

Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects. / Grier, A.; Valavanis, A.; Edmunds, C. et al.
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM). Institute of Electrical and Electronics Engineers, 2016. t. 90-91.

Allbwn ymchwil: Pennod mewn Llyfr/Adroddiad/Trafodion Cynhadledd › Cyfraniad i gynhadledd › adolygiad gan gymheiriaid

TY - GEN

T1 - Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

AU - Grier, A.

AU - Valavanis, A.

AU - Edmunds, C.

AU - Shao, J.

AU - Gardner, G.

AU - Manfra, M. J.

AU - Malis, O.

AU - Indjin, D.

AU - Ikonic, Z.

AU - Harrison, P.

AU - Cooper, Jonathan D.

N1 - http://eprints.whiterose.ac.uk/106549/1/SummerTopicals2016-abstract-Ikonic-contributed.pdf

PY - 2016/8/25

Y1 - 2016/8/25

N2 - We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

AB - We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

U2 - 10.1109/PHOSST.2016.7548743

DO - 10.1109/PHOSST.2016.7548743

M3 - Conference contribution

SP - 90

EP - 91

BT - 2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)

PB - Institute of Electrical and Electronics Engineers

T2 - IEEE Photonics Society Summer Topical Meeting Series (SUM)

Y2 - 11 July 2016 through 13 July 2016

ER -

Design considerations for GaN/AlN based unipolar (opto-) electronic devices, and interface quality aspects

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