Coherent vertical electron transport and interface roughness effects in AlGaN/GaN intersubband devices

A. Grier*, A. Valavanis, C. Edmunds, J. Shao, J. D. Cooper, G. Gardner, M. J. Manfra, O. Malis, D. Indjin, Z. Ikonic, P. Harrison

*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Cyfraniad at gyfnodolynErthygladolygiad gan gymheiriaid


We investigate electron transport in epitaxially grown nitride-based resonant tunneling diodes (RTDs) and superlattice sequential tunneling devices. A density-matrix model is developed, and shown to reproduce the experimentally measured features of the current-voltage curves, with its dephasing terms calculated from semi-classical scattering rates. Lifetime broadening effects are shown to have a significant influence in the experimental data. Additionally, it is shown that the interface roughness geometry has a large effect on current magnitude, peak-to-valley ratios and misalignment features; in some cases eliminating negative differential resistance entirely in RTDs. Sequential tunneling device characteristics are dominated by a parasitic current that is most likely to be caused by dislocations; however, excellent agreement between the simulated and experimentally measured tunneling current magnitude and alignment bias is demonstrated. This analysis of the effects of scattering lifetimes, contact doping and growth quality on electron transport highlights critical optimization parameters for the development of III-nitride unipolar electronic and optoelectronic devices. 

Iaith wreiddiolSaesneg
Rhif yr erthygl224308
Nifer y tudalennau9
CyfnodolynJournal of Applied Physics
Rhif cyhoeddi22
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 14 Rhag 2015
Cyhoeddwyd yn allanolIe

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