18-W three-way Doherty amplifier for 5G applications

A. M. Abdulkhaleq*, M. A. Yahya, N. O. Parchin, Y. Al-Yasir, M. Sajedin, A. Rayit, I. T.E. Elfergani, R. A. Abd-Alhameed, J. Rodriguez

*Awdur cyfatebol y gwaith hwn

Allbwn ymchwil: Cyfraniad at gynhadleddPapuradolygiad gan gymheiriaid

Crynodeb

A new design configuration using three-way Doherty power amplifier targeting 3 4-3.8 GHz for 5G applications is designed using three 6W GaN HEMT transistors to achieve an 18W peak power. In this design, a new impedance modulation configuration is used, where the amplifiers are designed to achieve 13 dB of gam over the design band. Changing the location of the peaking amplifier or changing the operation sequence of the peaking amplifier can achieve good efficiency at the back-off region; however, the phase difference should be compensated at the input side of each amplifier. In addition, the performance variation of the designed amplifier was tested for different VSWRs taking into account the antenna impedance changing due to beamforming. There was an average of 2.2 dBm variation in the output power and 22% efficiency variation for different VSWRs at both the peaking and back-off regions.

Iaith wreiddiolSaesneg
Dynodwyr Gwrthrych Digidol (DOIs)
StatwsCyhoeddwyd - 2019
Cyhoeddwyd yn allanolIe
DigwyddiadAntennas and Propagation Conference 2019, APC 2019 - Birmingham, Y Deyrnas Unedig
Hyd: 11 Nov 201912 Nov 2019

Cynhadledd

CynhadleddAntennas and Propagation Conference 2019, APC 2019
Gwlad/TiriogaethY Deyrnas Unedig
DinasBirmingham
Cyfnod11/11/1912/11/19

Ôl bys

Gweld gwybodaeth am bynciau ymchwil '18-W three-way Doherty amplifier for 5G applications'. Gyda’i gilydd, maen nhw’n ffurfio ôl bys unigryw.

Dyfynnu hyn